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Numéro de sériePSMN1R7-30YL
CategorieDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel TrenchMOS Logic Level FET
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.
SociétéPhilips Semiconductors (Acquired by NXP)
DatasheetTélécharger PSMN1R7-30YL datasheet
 
 
  • Description courte

  • Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.

    High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources

    Class-D amplifiers DC-to-DC converters Motor control Server power supplies

    Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS 10 V; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 100 109 Unit A W drain-source voltage Tj 25 °C; 150 °C drain current total power dissipation gate-drain charge Symbol Parameter

    Static characteristics RDSon drain-source on-state resistance 1.7 m

    Table 2. Pin mb Pinning information Symbol Description source gate mounting base; connected to drain

    Table 3. Ordering information Type number Package Name Description PSMN1R7-30YL LFPAK Plastic single-ended surface-mounted package (LFPAK); 4 leads

    Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current VGS 10 V; Tmb = 100 °C; see Figure 1; VGS 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 °C; tp 10 µs; pulsed; Tmb tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2 [1] Conditions Tj 25 °C; Tj 25 °C; Tj 150 °C; RGS 20 k Min -20 -55 Max Unit A mJ

    In accordance with the Absolute Maximum Rating System (IEC 60134).

    Avalanche ruggedness non-repetitive VGS 10 V; Tj(init) = 25 °C; 100 A; Vsup 30 V; drain-source avalanche RGS 50 ; unclamped energy

    Fig 1. Continuous drain current as a function of mounting base temperature
    Fig 2. Normalized total power dissipation as a function of mounting base temperature

    Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage