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Numéro de sérieZXMC3F31DN8
CategorieDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description30V SO8 Complementary Enhancement Mode MOSFET
30V SO8 Complementary enhancement mode MOSFET
SociétéZetex Inc.
DatasheetTélécharger ZXMC3F31DN8 datasheet
 
 
  • Description courte
  • Device Q1 Q2 V(BR)DSS (V) -30 QG (nC) 12.9 12.7 RDS(on) 0.024 @ VGS= 0.039 @ VGS= 0.045 @ VGS= 0.080 @ VGS= -4.5V ID (A)

    Description

    This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for power management and battery charging functions.

    Features
    Low on-resistance 4.5V gate drive capability Low profile SOIC package
    Applications
    DC-DC Converters SMPS Load switching switches Motor control Backlighting
    Device ZXMC3F31DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500

    Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= TA=25°C @ VGS= TA=70°C @ VGS= TA=25°C @ VGS= TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current

    Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation TA =25°C Linear derating factor Power dissipation TA =25°C Linear derating factor Power dissipation TA =25°C Linear derating factor Power dissipation TL =25°C Linear derating factor

    Junction to ambient Junction to ambient Junction to ambient Junction to lead

    (a) (b) (c) (d) (e) (f) For a device surface mounted 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. Mounted on FR4 PCB measured t 10 sec. Repetitive rating 25mm FR4 PCB, D=0.02, pulse width 300us ­ pulse width limited by maximum junction temperature. For a device with one active die. For a device with two active die running at equal power. Thermal resistance from junction to solder-point (at the end of the drain lead).