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Numéro de sérieZXMN2088DE6
CategorieDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description20V Dual N Enhancement Mode MOSFETs Packaged In SOT23-6
20V Dual N enhancement mode MOSFETs packaged in SOT23-6
SociétéZetex Inc.
DatasheetTélécharger ZXMN2088DE6 datasheet
 
 
  • Description courte
  • ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability
    Description

    This new generation dual n-channel trench MOSFET from Zetex features low on-resistance achievable with low gate drive.

    Features
    Low on-resistance Low gate drive capability SOT23-6 (dual) package
    Applications
    Power Management functions Disconnect switches Relay driving and load switching
    Device Reel size (inches) Tape width (mm) Quantity per reel

    Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= TA=25°C @ VGS= TA=70°C @ VGS= 4.5V; TA=25°C Pulsed Drain current (c) Power dissipation TA =25°C (a) (d) Linear derating factor Power dissipation TA =25°C Linear derating factor Power dissipation TA =25°C Linear derating factor Operating and storage temperature range Tj, Tstg

    Junction to Ambient (a) (d) Junction to Ambient (a) (e) Junction to Ambient (b) (d)

    (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) As above measured t 5 sec. (c) Repetitive rating 25mm FR4 PCB, D=0.02, pulse width 300us ­ pulse width limited by maximum junction temperature. (d) For device with one active die (e) For device with two active die running at equal power.