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Numéro de sérieZXMP3F36N8
CategorieDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel
Description30V P-channel Enhancement Mode MOSFET Packaged In SO8
30V P-channel enhancement mode MOSFET packaged in SO8
SociétéZetex Inc.
DatasheetTélécharger ZXMP3F36N8 datasheet
 
 
  • Description courte

  • Description

    This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance.

    Features
    Applications
    Battery Protection Battery disconnect Power management functions
    Device ZXMP3F36N8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500

    Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= TA=25°C @ VGS= TA=70°C @ VGS= TA=25°C @ VGS= -10V; TL=25°C Pulsed Drain current

    Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation TA =25°C Linear derating factor Power dissipation TA =25°C Linear derating factor Power dissipation TL =25°C Linear derating factor

    Junction to ambient Junction to ambient Junction to lead

    (a) (b) (c) (d) For a device surface mounted 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Mounted on FR4 PCB measured t 10 sec. Repetitive rating 25mm FR4 PCB, D=0.02, pulse width 300us ­ pulse width limited by maximum junction temperature. Thermal resistance from junction to solder-point (at the end of the drain lead).