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Numéro de sérieZXMP3F37DN8
CategorieDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel
Description30V Dual P-channel Enhancement Mode MOSFET Packaged In SO8
30V Dual P-channel enhancement mode MOSFET packaged in SO8
SociétéZetex Inc.
DatasheetTélécharger ZXMP3F37DN8 datasheet
 
 
  • Description courte

  • Description

    This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

    Features
    Low on-resistance Fast switching speed Low gate drive Dual SO8 package
    Applications
    DC-DC Converters Power management functions Disconnect switches Motor control
    Device ZXMP3F37DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500

    Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= TA=25°C @ VGS= TA=70°C @ VGS= TA=25°C @ VGS= -10V; TL=25°C Pulsed Drain current

    Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation TA =25°C Linear derating factor Power dissipation TA =25°C Linear derating factor Power dissipation TL =25°C Linear derating factor Power dissipation TL =25°C Linear derating factor

    Junction to ambient Junction to ambient Junction to ambient Junction to lead

    (a) (b) (c) (d) (e) (f) For a dual device surface mounted 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. For a dual device surface mounted on FR4 PCB measured t 10 sec. Repetitive rating 25mm FR4 PCB, D=0.02, pulse width 300us ­ pulse width limited by maximum junction temperature. For a dual device with one active die. For a dual device with 2 active die running at equal power. Thermal resistance from junction to solder-point (at the end of the drain lead).