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Numéro de sérieAG403-89
CategorieRF & Microwaves => Gain Blocks
DescriptionInGaP HBT Gain Block
InGaP HBT Gain Block
SociétéTriQuint Semiconductor
DatasheetTélécharger AG403-89 datasheet
 
 
  • Description courte

  • ­ 6000 MHz +17.5 dBm at 900 MHz +31 dBm at 900 MHz 21 dB Gain at 900 MHz Single Voltage Supply Lead-free / RoHS-compliant / Green SOT-89 package· Internally matched to 50

    The is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG403-89 typically provides dB of gain, +31 dBm OIP3, and +17.5 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 1000 years at mounting temperatures +85 °C and is housed in a leadfree/green/RoHS-compliant SOT-89 industry-standard SMT package. The AG403-89 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG403-89 will work for other various applications within the to 6 GHz frequency range such as CATV and WiMAX.

    Applications
    · Mobile Infrastructure CATV / FTTX W-LAN / ISM RFID WiMAX / WiBro

    Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Output IP2 Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Device Voltage Device Current

    1. Test conditions: 25 ºC, Supply Voltage +6 V, Rbias System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

    Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature Thermal Resistance, Rth V +10 dBm °C 191 °C/W

    Description
    Specifications and information are subject to change without notice
    Operation of this device above any of these parameters may cause permanent damage.

    WJ Communications, Inc· Phone 1-800-WJ1-4401· FAX: 408-577-6621· e-mail: sales@wj.com· Web site: www.wj.com, www.TriQuint.com

    1. Test conditions: = 25 ºC, Supply Voltage +6 V, Device Voltage 4.91 V, Rbias 18.2 , Icc 60 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.



    Specifications and information are subject to change without notice WJ Communications, Inc· Phone 1-800-WJ1-4401· FAX: 408-577-6621· e-mail: sales@wj.com· Web site: www.wj.com, www.TriQuint.com Page of 5 January 2008

    Specifications and information are subject to change without notice WJ Communications, Inc· Phone 1-800-WJ1-4401· FAX: 408-577-6621· e-mail: sales@wj.com· Web site: www.wj.com, www.TriQuint.com Page of 5 January 2008