|Numéro de série||NUP4016|
|Categorie||Power Management => Protection and Isolation|
|Description||Low Capacitance Diode-TVS
The NUP4016P5 transient voltage suppressor is designed to protect high speed data lines from ESD. Ultra-low capacitance and high level of ESD protection makes this device well suited for use in USB 2.0 applications.
|Datasheet||Télécharger NUP4016 datasheet|
|NUP4016 Ultra-Low Capacitance Diode-TVS Array for High Speed Data Line Protection
The NUP4016P5 transient voltage suppressor is designed to protect high speed data lines from ESD. Ultra-low capacitance and high level of ESD protection makes this device well suited for use in USB 2.0 applications.Features
· Ultra-Low Capacitance (0.5 pF Typical Between I/O Lines and·
Ground) ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model and Class C (Exceeding 400 V) per Machine Model Protection for the Following IEC Standards: IEC 15 kV (contact) UL Flammability Rating 94 V-0 This is a Pb-Free Device High Speed Communication Line Protection USB 2.0 High Speed Data Line and Power Line Protection Monitors and Flat Panel Displays MP3 Gigabit EthernetTypical Applications
4M Unit °C Specific Device Code M = Date Code
Rating Operating Junction Temperature Range Storage Temperature Range Lead Solder Temperature - Maximum (10 Seconds) Human Body Model (HBM) Machine Model (MM) IEC 61000-4-2 Contact (ESD) Symbol TJ Tstg TL ESD Value 55 to
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Parameter Reverse Working Voltage Breakdown Voltage Reverse Leakage Current Junction Capacitance Junction Capacitance Symbol VRWM VBR IR CJ (Note = 1 mA, (Note 2) VRWM = 1 MHz between I/O Pins and GND = 1 MHz between I/O Pins Conditions Min Typ Max 5.0 Unit mA pF
1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 2. VBR is measured at pulse test current IT.
5X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM HE MILLIMETERS MIN NOM MAX BSC MIN INCHES NOM MAX
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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