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Numéro de sérieL6387E
CategoriePower Management => Power Distribution/Switches => MOSFET Drivers
DescriptionMOS/IGBT Drivers
High-voltage high and low side driver
SociétéST Microelectronics, Inc.
DatasheetTélécharger L6387E datasheet
 
 
  • Description courte
  • Features

    High voltage rail 600 V dV/dt immunity ±50 V/nsec in full temperature range Driver current capability: 400 mA source, 650 mA sink Switching times 50/30 nsec rise/fall with 1nF load CMOS/TTL Schmitt trigger inputs with hysteresis and pull down Internal bootstrap diode Outputs in phase with inputs Interlocking function

    Description

    The is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.

    1.2 1.3 Absolute maximum ratings. 3 Thermal data. 3 Recommended operating conditions. 3
    Typical characteristic. 9 Package mechanical data. 10 Order codes. 13 Revision history. 14

    Symbol Vout Vcc Vboot Vhvg Vlvg Vi dVout/dt Ptot Tj Ts Output voltage Supply voltage Floating supply voltage High side gate output voltage Low side gate output voltage Logic input voltage Allowed output slew rate Total power dissipation (TJ = 85 °C) Junction temperature Storage temperature

    Parameter Value -3 to Vboot -1 to Vboot -0.3 to Vcc -0.3 to Vcc to 150 Unit V/ns mW °C
    ESD immunity for pins 6, 7 and 8 is guaranteed 900 V (Human Body Model)
    Parameter Thermal Resistance Junction to ambient DIP-8 100 Unit °C/W

    Pin 6 8 Parameter Output voltage Floating supply voltage Switching frequency 3 Supply voltage Junction temperature -45 HVG,LVG load = 1nF Test condition Min

    1. If the condition Vboot - Vout 18V is guaranteed, Vout can range from 580V 2. VBS = Vboot - Vout