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Numéro de sérieSTPS1H100
CategorieDiscrete => Diodes & Rectifiers => Schottky Barrier Rectifiers
DescriptionSchottky Barrier
High voltage power Schottky rectifier
SociétéST Microelectronics, Inc.
DatasheetTélécharger STPS1H100 datasheet
 
 
  • Description courte
  • Features

    Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and forward voltage drop Avalanche capability specified ECOPACK2® halogen-free component (SMAflat)

    Description

    Schottky rectifiers designed for high frequency miniature switched mode power supplies such as adaptators and on board DC/DC converters. Packaged in SMA, SMAflat or SMB. Table 1.

    Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt

    Parameter Repetitive peak reverse voltage RMS forward voltage Average forward current = 0.5 Value + 175

    Surge non repetitive forward current =10 ms sinusoidal Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage <

    condition to avoid thermal runaway for a diode on its own heatsink
    Parameter Reverse leakage current Test conditions VR = VRRM Min. Typ. Max. 0.65 0.7 Unit µA mA
    To evaluate the conduction losses use the following equation: 0.54 x IF(AV) 0.08 IF2(RMS)
    Average forward power dissipation Figure 2. versus average forward current
    Average forward current versus ambient temperature = 0.5)
    Normalized avalanche power derating versus pulse duration
    Normalized avalanche power derating versus junction temperature
    Non repetitive surge peak forward current versus overload duration (maximum values) (SMB)
    Non repetitive surge peak forward current versus overload duration (maximum values) (SMA)