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Numéro de sérieSTTH3002C
CategorieDiscrete => Diodes & Rectifiers => Ultra Fast Diodes
DescriptionUltrafast Rectifiers
High efficiency ultrafast diode
SociétéST Microelectronics, Inc.
DatasheetTélécharger STTH3002C datasheet
  • Description courte
  • Features

    Suited for SMPS Low losses Low forward and reverse recovery times High surge current capability High junction temperature Insulated version TOP3I: ­ Insulated voltage: 2500 Vrms ­ Capacitance 12 pF


    Dual center tab rectifier suited for switch mode power supplies and high frequency to DC converters. Packaged I2PAK, D2PAK, and TOP3I, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection

    Absolute ratings (limiting values = 25 °C, unless otherwise specified)

    Parameter Repetitive peak reverse voltage RMS forward current I2PAK, D2PAK IF(AV) Average forward current, 0.5 TOP3I IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature 10 ms Sinusoidal Per diode 150 °C Per device 145 °C Per diode 125 °C Per device 105 °C Value A °C Unit V A

    Parameter I2PAK, D2PAK Per diode Total Value 1.0 3.5 °C/W Total 0.5 1.1 Unit

    When the two diodes 1 and 2 are used simultaneously: Tj(diode = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c)

    Parameter Test conditions VR = VRRM A 0.75 Min. Typ Max. µA V Unit
    To evaluate the conduction losses use the following equation: 0.69 x IF(AV) 0.01 IF2(RMS) Table 5.

    Parameter Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Test conditions 1 A, dIF/dt = 200 A/µs, 15 A, dIF/dt = 200 A/µs, 15 A, dIF/dt = 200 A/µs VFR 1.1 x VFmax, 15 A, dIF/dt = 200 A/µs, °C 2.5 Min. Typ 17 6 Max. 7.8 110 Unit ns V

    Peak current versus duty cycle (per diode)
    Forward voltage drop versus forward current (typical values, per diode)