ABCelectronique : portail d'information dans le domaine de l'électronique
Numéro de sérieSTK28N3LLH5
CategorieDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionPower MOSFETs
N-channel 30 V, 0.0029 ?, 28 A, PolarPAK® STripFET™V Power MOSFET
SociétéST Microelectronics, Inc.
DatasheetTélécharger STK28N3LLH5 datasheet
  • Description courte

  • Features

    Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/EC european directive) High avalanche ruggedness PolarPAK® is a trademark of VISHAY Figure 1. Internal schematic diagram


    This product utilizes the 5th generation of design rules of ST's proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density to be achieved. Table 1. Device summary

    Order code STK28N3LLH5 Marking 283L5 Package PolarPAK® Packaging Tape and reel

    This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

    Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) = 25°C Drain current (continuous) = 100°C Drain current (pulsed) Total dissipation = 25°C Derating factor Value to 150 Unit W/°C J °C

    Single pulse avalanche energy Operating junction temperature Storage temperature

    1. When mounted on FR-4 board oz Cu and 10sec 2. Pulse width limited by package 3. Starting = 10A, VDD = 25V

    Rthj-amb(1) Thermal resistance junction-amb Rthj-c(2) Rthj-c(3) Thermal resistance junction-case (top drain) Thermal resistance junction-case (source)

    1. When mounted on FR-4 board oz Cu and 10sec 2. Steady state 3. Measured at source pin when the device is mounted on FR-4 board in steady state