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Numéro de sérieSTD12NM50ND
CategorieDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionPower MOSFETs
N-channel 500 V, 0.29 ?, 11 A, FDmesh™ II Power MOSFET (with fast diode), D²PAK, DPAK
SociétéST Microelectronics, Inc.
DatasheetTélécharger STD12NM50ND datasheet
  • Description courte
  • N-channel 11 A, FDmeshTM II Power MOSFET (with fast diode), D2PAK, DPAK

    The worldwide best RDS(on)* area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1.


    The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.

    Marking 12NM50ND Package D2PAK DPAK Packaging Tape and reel Tape and reel

    This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

    Package mechanical data. 7 Packaging mechanical data. 10 Revision history. 12

    Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) 25 °C Drain current (continuous) 100 °C Drain current (pulsed) Total dissipation 25 °C Peak diode recovery voltage slope Storage temperature Operating junction temperature Value to 150 Unit V/ns °C

    1. Pulse width limited by safe operating area 2. ISD 11 A, di/dt 600 A/µs, VDD = 80% V(BR)DSS

    Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Maximum lead temperature for soldering purposes 30 300 D²PAK 1.25 50 DPAK Unit °C/W °C

    Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting = 25 °C, ID = IAS, VDD 50 V) Max value 5 350 Unit A mJ