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Numéro de sérieSTD6N52K3
CategorieDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionPower MOSFETs
Datasheet N-channel 525 V, 1 ?, 5 A, DPAK, TO-220FP SuperMESH3™ Power MOSFET
SociétéST Microelectronics, Inc.
DatasheetTélécharger STD6N52K3 datasheet
 
 
  • Description courte

  • Features

    100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Figure 1.

    Application
    Description

    The new SuperMESH3TM series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESHTM layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application.

    Marking 6N52K3 Package DPAK TO-220FP Packaging Tape and reel Tube

    This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

    Package mechanical data. 7 Package mechanical data. 10 Revision history. 11

    Value Parameter DPAK Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) 25 °C Drain current (continuous) 100 °C Drain current (pulsed) Total dissipation 25 °C Derating factor to

    Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink = 25 °C) Storage temperature Max. operating junction temperature

    1. Limited by package 2. Pulse width limited by safe operating area 3. ISD 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS.

    Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose DPAK 5 -62.5 Unit °C/W °C

    Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting ID = IAR, VDD = 50V) Max value TBD Unit A mJ