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Numéro de série2STR1215
CategorieDiscrete => Transistors => Bipolar => General Purpose => NPN
DescriptionTransistors, Power Bipolar
Low voltage fast-switching NPN power transistor
SociétéST Microelectronics, Inc.
DatasheetTélécharger 2STR1215 datasheet
  • Description courte

  • Features

    Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface mounting circuits


    LED Battery charger Voltage and relay driver Voltage regulation Figure 1. Internal schematic diagram


    The is a NPN transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary PNP is the 2STR2215.

    Symbol VCBO VCEO VEBO IC ICM Ptot Tstg TJ

    Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tamb 25 °C Storage temperature Max. operating junction temperature Value to 150 Unit °C

    Rthj-amb(1) Thermal resistance junction-amb (1) Device mounted on PCB area of 1cm2