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Numéro de sérieTPS72018
CategoriePower Management => Regulators => Linear Regulators => LDO (Low Drop Out)
DescriptionSingle Output LDO, 350mA, Fixed (1.8V), Bias Pin
he TPS720xx family of dual rail, low-dropout linear regulators (LDOs) offers outstanding ac performance (PSRR, load and line transient response), while consuming a very low quiescent current of 38µA.

The VBIAS rail that powers the control circuit of the LDO draws very low current (on the order of the quiescent current of the LDO) and can be connected to any power supply that is equal to or greater than 1.4V above the output voltage. The main power path is through VIN, which can be a lower voltage than VBIAS; it can be as low as VOUT + VDO, increasing the efficiency of the solution in many power-sensitive applications. For example, VIN can be an output of a high-efficiency, dc-dc step-down regulator.
SociétéTexas Instruments, Inc.
DatasheetTélécharger TPS72018 datasheet
 
 
  • Description courte

  • 350mA, Ultra-Low VIN, RF Low-Dropout Linear Regulator with Bias Pin
    FEATURES
    DESCRIPTION

    The TPS720xx family of dual rail, low-dropout linear regulators (LDOs) offers outstanding ac performance (PSRR, load and line transient response), while consuming a very low quiescent current of 38µA. The VBIAS rail that powers the control circuit of the LDO draws very low current (on the order of the quiescent current of the LDO) and can be connected to any power supply that is equal to or greater than 1.4V above the output voltage. The main power path is through VIN, which can be a lower voltage than VBIAS; it can be as low as VOUT + VDO, increasing the efficiency of the solution in many power-sensitive applications. For example, VIN can be an output of a high-efficiency, dc-dc step-down regulator. The TPS720xx supports a novel feature in which the output of the LDO regulates under light loads when the IN pin is left floating. The light-load drive current is sourced from VBIAS under this condition. This feature is particularly useful in power-saving applications where the dc/dc converter connected to the IN pin is disabled but the LDO is still required to regulate the voltage to a light load. The TPS720xx is stable with ceramic capacitors and uses an advanced BICMOS fabrication process that yields a dropout a 350mA output load. The TPS720xx has the unique feature of providing a monotonic VOUT rise (overshoot limited to 3%) with VIN inrush current limited 100mA + ILOAD with an output capacitor of 2.2µF. The TPS720xx uses a precision voltage reference and feedback loop to achieve overall accuracy of 2% over load, line, process, and temperature extremes. An ultra-small wafer chip-scale package (WCSP) makes the TPS720xx ideal for handheld applications. The TPS720xx is also available a SON-8 package. This family of devices is fully specified over the temperature range to +125°C.

    · 350mA High-Performance LDO· Low Quiescent Current: 38µA· Excellent Load Transient Response: ±15mV for ILOAD in 1µs· Excellent Line Transient Response: VOUT = ±2mV for VBIAS in 1µs VOUT = ±200µV for VIN in 1µs· Low Noise: 100kHz)· 80dB VIN PSRR 10kHz)· 70dB VBIAS PSRR to 10kHz)· Fast Start-Up Time: 140µs· Built-In Soft-Start with Monotonic VOUT Rise and Startup Current Limited 100mA + ILOAD· Over-Current and Thermal Protection· Low Dropout: 110mV at ILOAD = 350mA· Stable with 2.2µF Output Capacitor· Available 0,96mm WCSP-5 and 2mm SON-6 Packages

    APPLICATIONS
    · Digital Cameras Cellular Camera Phones Wireless LAN Handheld Products
    BIAS Standalone dc/dc Converter or PMU 1.8V IN OUT 1.3V VCORE 2.2mF Ceramic TPS720xx EN GND

    Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners.

    PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

    This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

    PRODUCT TPS720xxyyyz VOUT XX is nominal output voltage (for example, = 2.85V). YYY is the package designator. Z is tape and reel quantity = 250).

    For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. Output voltages from in 50mV increments are available through the use of innovative factory EEPROM programming; minimum order quantities may apply. Contact factory for details and availability.

    to +125°C (unless otherwise noted). All voltages are with respect to GND.

    PARAMETER Input voltage range (steady-state), VIN Bias voltage range, VBIAS Enable voltage range, VEN Output voltage range, VOUT Peak output current, IOUT Output short-circuit duration Total continuous power dissipation, PDISS Human body model (HBM) ESD rating Charged device model (CDM) Machine model (MM) Operating junction temperature range, TJ Storage temperature range, TSTG to +150

    ­0.3 to VBIAS to +5.0 Internally limited Indefinite See Dissipation Ratings Table

    Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. To ensure proper operation of the device it is necessary that VIN VBIAS under all conditions. Whichever is less. For durations no longer than 1ms each, for a total of no more than 1000 occurrences over the lifetime of the device.

    BOARD High-K (1) High-K (1) PACKAGE YZU DRV RJC 51°C/W 20°C/W RJA 248°C/W 65°C/W DERATING FACTOR ABOVE 160mW 615mW

    The JEDEC high-K (2s2p) board used to derive this data was × 3-inch, multilayer board with 1-ounce internal power and ground planes and 2-ounce copper traces on top and bottom of the board.

    Over operating temperature range (TJ to +125°C), VBIAS = (VOUT or 2.5V (whichever is greater); VIN VOUT + 0.5V, IOUT = 1mA, VEN = 1.1V, COUT = 2.2µF, unless otherwise noted. Typical values are = +25°C.

    PARAMETER VIN VBIAS Input voltage range Bias voltage range Output voltage range Nominal Over VBIAS, VIN, IOUT, to +125°C VOUT

    = +25°C VOUT + 1.4V VBIAS 5.5V, VOUT + 0.5V VIN 4.5V, 0mA IOUT 350mA VOUT + 1.4V VBIAS 5.5V, VOUT + 0.5V VIN 4.5V, 0mA IOUT 350mA 1.6V VOUT 3.3V VOUT + 1.4V VBIAS 5.5V, 0µA IOUT 500µA VIN = (VOUT to 4.5V, IOUT = 1mA VBIAS = (VOUT or 2.5V (whichever is greater) to 5.5V, IOUT = 1mA VIN = 400mV, tRISE = tFALL = 1µs VBIAS = 600mV, tRISE = tFALL 1µs 0mA IOUT 350mA (no load to full load) 0mA IOUT 350mA, tRISE = tFALL = 1µs VIN = VOUT(NOM) ­ 0.1V, (VBIAS ­ VOUT(NOM)) = 1.4V, IOUT = 350mA VIN = VOUT(NOM) + 0.3V, IOUT = 350mA VOUT 0.9 × VOUT(NOM) IOUT = 100µA IOUT to 350mA VEN = 100Hz VIN ­ VOUT 0.5V, VBIAS = VOUT + 1.4V, IOUT = 100Hz VIN ­ VOUT 0.5V, VBIAS = VOUT + 1.4V, IOUT to 100kHz, VBIAS 2.5V, VIN = VOUT + 0.5V VBIAS = (VOUT or 2.5V (whichever is greater), VIN = VOUT ­3.0 ­2.0

    VOUT/VBIAS VBIAS line regulation VIN line transient VBIAS line transient VOUT/IOUT Load regulation Load transient VDO_IN VDO_BIAS ICL IGND ISHDN VIN dropout voltage (5) VBIAS dropout voltage (6) Output current limit Ground pin current Shutdown current (IGND)

    Performance specifications are ensured to a minimum VIN = VOUT + 0.5V. Whichever is less. Minimum VBIAS = (VOUT or 2.5V (whichever is greater) and VIN= VOUT 0.5V. VO nominal value is factory programmable through the onchip EEPROM. Measured for devices with VOUT(NOM) 1.2V. VBIAS ­ VOUT with VOUT = VOUT(NOM) ­ 0.1V. Measured for devices with VOUT(NOM) 1.8V. Submit Documentation Feedback 3