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Numéro de sérieSI2303
CategorieDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel
DescriptionPIN Diode BAS23W
SOT-23 P-Channel MOSFET
SociétéMicro Commercial Components
DatasheetTélécharger SI2303 datasheet
 
 
  • Description courte

  • Features

    RDS(ON)=180m¡@VGS= -4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead free product is acquired SOT-23 Package Marking Code: S3 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

    Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature

    P-Channel Enhancement Mode Field Effect Transistor
    Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
    Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics
    Gate Threshold Voltage Static Drain-Source On-Resistance

    Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

    Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Voltage

    Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.