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Liste catégorie Optoelectronique - Affichage - Emetteurs Infrarouge page 0
1N6264: Hermetic Infrared Light Emitting Diode. 940 NM GAAS
1N6265: Hermetic Infrared Light Emitting Diode. 940 NM GAAS
1N6266: Hermetic Infrared Light Emitting Diode. 940 NM GAAS
AA3528F3C: in Ra-red Emitting Diode. Lens Type Water Clear.
AA3528F4C: in Ra-red Emitting Diode. Lens Type Water Clear.
AM2520F3C03: in Ra-red Emitting Diode.
AM2520SF4C03: in Ra-red Emitting Diode.
AN1101W:
AN1102F:
AN1102W:
AN1105W:
AN1111C:
AN1111R:
AN304:
AN333:
AN501:
AN504:
AP1608F3C: in Ra-red Emitting Diode. Lens Type Water Clear.
AP1608SF4C: in Ra-red Emitting Diode. Lens Type Water Clear.
AP2012F3C: in Ra-red Emitting Diode. 2.0 X 1.2mm SMT Led. Peak Wavelength 940 Nm. Lens Type Water Clear.
AP2012SF4C: in Ra-red Emitting Diode. 2.0 X 1.2mm SMT Led. Peak Wavelength 880 Nm. Lens Type Water Clear.
AP3216F3C: in Ra-red Emitting Diode. Peak Wavelength 940 Nm. Lens Type Water Clear.
AP3216SF4C: in Ra-red Emitting Diode. Peak Wavelength 880 Nm. Lens Type Water Clear.
APL3015F3C: in Ra-red Emitting Diode. 3.0 X 1.5 MM SMT Led. Lens Type Water Clear.
APL3015SF4C: in Ra-red Emitting Diode. 3.0 X 1.5 MM SMT Led. Lens Type Water Clear.
C2741-03: Infrared Vidicon Camera
C2741-32A: Infrared Vidicon Camera
C2741-35A: Infrared Vidicon Camera
C2955: Infrared ic Internal Inspection System
DN501:
DN504:
DNF318U-4:
DNF320-4:
DNF324U-4:
DNH318U:
DNK318U:
DNK324U:
DNP1101W:
DNP1102F:
DNP1102W:
DNP1105W:
DNP1111R:
DNP318U-4:
DNP319:
DNP324U-8:
DNP325-4:
DNP331:
E148-5V: T-1 And T-1 3/4, Infrared Leds
E304-12V: T-1 And T-1 3/4, Infrared Leds
E304-5V: T-1 And T-1 3/4, Infrared Leds
F0094U: Infrared Emitting Diode Chip, 950 NM
F0094V: Infrared Emitting Diode Chip, 950 NM
F0118G: Infrared Emitting Diode Chip, 950 Nm, Enhanced Power
F0118J: Infrared Emitting Diode Chip, 950 Nm, Enhanced Power
F0235D: Infrared Emitting Diode Chip, 950 NM
F0235F: Infrared Chip, 950 Nm, 10 Mil
F0594A: Infrared Chips, 950 Nm, 12 Mil
F0950A: Infrared Emitting Diode Chip, 950 Nm, High Power
F0950B: Infrared Emitting Diode Chip, 950nm, High Power, 12 Mil, 18 NS Switching Time
F1047A: Infrared Emitting Diode Chip, 880 Nm, High Power
F1047B: Infrared Emitting Diode Chip, 880 Nm, High Power
F1048A: Infrared Emitting Diode Chip, 880 Nm, High Power
F1048B: Infrared Emitting Diode Chip, 880 Nm, High Power
F1235A: Infrared Emitting Diode Chip, 950 NM
F1235B: Infrared Chip, 950 Nm, 8 Mil, Auge Eutectic Backside
F1235C: Infrared Chip, 950 Nm, 8 Mil, Au-alloy Backside
G7751-02: Infrared Detector Module With Preamp
G7751-21: Infrared Detector Module With Preamp
G7752-10: Infrared Detector Module With Preamp
HSDL-4200: High-performance T-13/4 ( 5 MM ) TS Algaas Infrared ( 875 NM ) Lamp
HSDL-4261: High-power T-1 (5mm)AlGaAs Infrared (870nm) Lamp<<<>>>the HSDL-4261 Infrared<<<>>>emitter Was Design
HSDL-4400: High-performance IR Emitter in Subminiature SMT Package
HSDL-4420: High-performance IR Emitter in Subminiature SMT Package
IE-0320H:
IE-0320X:
IE-0340HCY:
IE-0505HP:
IE-0510HA:
IE-0510HEB:
IE-0510HP:
IE-0510HT:
IE-0510HU:
IE-0510HU-1:
IE-0515HA:
IE-0515HL:
IE-0515HP:
IE-0520HP:
IE-0520HT:
IE-0520HU:
IE-0520HU-1:
IE-0522HA:
IE-0530HA:
IE-0530HD:
IE-0530HP:
IE-0530HT:
IE-0530HU:
IE-0530HU-1:
IE-0545HP:
IE-0570HCY:
IE-15KA:
IE-1CL3:
IE-372P:
IE-470E:
IE-A20H:
IRL80A: GAAS Infrared Emitter in Sidelooker Package, 950 Nm, Half Angle ±30 °
IRL81A: Gaalas Infrared Emitter in Sidelooker Package, 880 Nm, Half Angle ±25 °
IS654A:
IS656A:
IS658A:
K101: Photocoupler ( These Photocouplers Consist of a Gallium Arsenide Infrared Emitting )
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