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Liste catégorie RF & Micro-ondes - Transistors - FETs - FETs de Puissance page 0
2SK1310: VDSS (V) = 100 ;; Pc
(tc = 25 C) (W) = 250 ;; Id (A) = 12 ;; Pout (W) .min = 190 ;; VDD (V) = 50
2SK1739: VDSS (V) = 80 ;; Pc
(tc = 25 C) (W) = 250 ;; Id (A) = 11 ;; Pout (W) .min = 90 ;; VDD (V) = 40 ;;
2SK2854: VDSS (V) = 10 ;; Pc
(tc = 25 C) (W) = 0.5 ;; Id (A) = 0.5 ;; Pout (W) .min = 0.4 ;; VDD (V) = 6 ;
2SK2855: VDSS (V) = 10 ;; Pc
(tc = 25 C) (W) = 0.5 ;; Id (A) = 1 ;; Pout (W) .min = 1.26 ;; VDD (V) = 6 ;;
2SK3074: VDSS (V) = 30 ;; Pc
(tc = 25 C) (W) = 3 ;; Id (A) = 1 ;; Pout (W) .min = 0.630 ;; VDD (V) = - ;;
2SK3075: VDSS (V) = 30 ;; Pc
(tc = 25 C) (W) = - ;; Id (A) = - ;; Pout (W) .min = 7.5 ;; VDD (V) = - ;; .f
DRF100: The DRF100 and DRF1200 are two new power MOSFETs specifically designed for RF generators: * D
DRF1200: The DRF100 and DRF1200 are two new power MOSFETs specifically designed for RF generators: * D
EIC0910-25: 9.50-10.50 GHz 25-Watt Internally Matched Power FET9.50-10.50 GHz 25-Watt Internally Matched Power
EIC1010-25: 9.50-10.50 GHz 25-Watt Internally Matched Power FET9.50-10.50 GHz 25-Watt Internally Matched Power
EIC1213-12: 12.75-13.25 GHz 12-Watt Internally Matched Power FET12.75-13.25 GHz 12-Watt Internally Matched Pow
EIC1213-8: 9.50-10.50 GHz 25-Watt Internally Matched Power FET9.50-10.50 GHz 25-Watt Internally Matched Power
EIC1314-8: 12.75-13.25 GHz 12-Watt Internally Matched Power FET12.75-13.25 GHz 12-Watt Internally Matched Pow
FLM1314-8F: X,ku-band Internally Matched Fets
FLM2527L-20F: L-band Internally Matched Fets
FLM3135-4F: C-band Internally Matched Fets
FLM4450-4F: C-band Internally Matched Fets
FLM5972-12F: C-band Internally Matched Fets
HWC27NC: GAAS Power Fet
HWC27YC: GAAS Power Fet
HWC30NC: GAAS Power Fet
HWC34NC: GAAS Power Fet
HWF1681RA: 15 W L-band GAAS Power Fet
HWF1682RA: 20 W L-band GAAS Power Fet
HWF1686NC: 3.5 W L-band Power Fet Non-via Hole Chip
HWF1686RA: 5.4 W L-band GAAS Power Fet
HWF1686YC: 5.4 W L-band Power Fet Via Hole Chip
HWF1687RA: 7.5 W L-band GAAS Power Fet
HWL23NPB: Plastic Packadged GAAS Power Fet
HWL26NC: GAAS Power Fet
HWL26NPA: Plastic Packadged GAAS Power Fet
HWL26NPB: Plastic Packadged GAAS Power Fet
HWL26YC: GAAS Power Fet
HWL27NC: GAAS Power Fet
HWL27NPB: Plastic Packadged GAAS Power Fet
HWL27YRA: Seramic Packadged GAAS Power Fet
HWL30NC: GAAS Power Fet
HWL30NPA: Plastic Packadged GAAS Power Fet
HWL30YRA: Seramic Packadged GAAS Power Fet
HWL30YRF: Seramic Packadged GAAS Power Fet
HWL32NPA: Plastic Packadged GAAS Power Fet
HWL34NC: GAAS Power Fet
HWL34YRA: Seramic Packadged GAAS Power Fet
HWL34YRF: Seramic Packadged GAAS Power Fet
HWL36YRA: Seramic Packadged GAAS Power Fet
HWL36YRF: Seramic Packadged GAAS Power Fet
MD7IC2755NR1: RF LDMOS Wideband IntegratedPower AmplifiersThe MD7IC2755N wideband integrated circuit is design
MD7P19130HR3: RF Power Field Effect TransistorsRF Power Field Effect TransistorsN-Channel Enhancement -Mode La
MRF18085ALSR3: RF Power Field Effect TransistorGNDesigned for GSM and GSM EDGE base station applications withfr
MRF19090SR3: RF Power Field Effect TransistorRF Power Field Effect TransistorN-Channel Enhancement -Mode Late
MRF21030: MRF21030LSR3 2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET
MRF21045: RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for W-CDMA b
MRF377HR3: RF Power Field-Effect TransistorRF Power Field-Effect TransistorN-Channel Enhancement -Mode Late
MRF5S19060NR1: RF Power Field Effect TransistorsRF Power Field Effect TransistorsN-Channel Enhancement -Mode La
MRF5S19150HR3: RF Power Field Effect TransistorRF Power Field Effect TransistorN-Channel Enhancement -Mode Late
MRF6P24190HR6: RF Power Field Effect TransistorN-Channel Enhancement -Mode Lateral MOSFET
MRF6S24140HR3: RF Power Field Effect TransistorsN-Channel Enhancement -Mode Lateral MOSFETs
MRF6S24140HSR3: RF Power Field Effect TransistorsN-Channel Enhancement -Mode Lateral MOSFETs
MRF6S27015N: RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for CDMA bas
MRF6S9125NR1: RF Power Field Effect TransistorsDesigned for broadband commercial and industrial applications wit
MRF6S9160HR3: RF Power Field Effect TransistorsDesigned for N-CDMA, GSM and GSM EDGE base station applications
MRF7S16150HR3: RF Power Field Effect TransistorsRF Power Field Effect TransistorsN-Channel Enhancement -Mode La
MRFE6P9220HR3: RF Power Field Effect TransistorN-Channel Enhancement -Mode Lateral MOSFETDesigned for broadband
MW6IC2420NBR1: RF LDMOS IntegratedPower AmplifierThe MW6IC2420NB integrated circuit is designed with on--chip m
MW7IC2725NR1: RF Power Field Effect TransistorsN-Channel Enhancement -Mode Lateral MOSFETsDesigned for WiMAX b
MW7IC2750GNR1: RF Power Field Effect TransistorsN-Channel Enhancement -Mode Lateral MOSFETsDesigned for WiMAX b
MW7IC2750NBR1: RF Power Field Effect TransistorsN-Channel Enhancement -Mode Lateral MOSFETsDesigned for WiMAX b
MW7IC2750NR1: RF Power Field Effect TransistorsN-Channel Enhancement -Mode Lateral MOSFETsDesigned for WiMAX b
MW7IC2750NR1: RF Power Field Effect TransistorsN-Channel Enhancement -Mode Lateral MOSFETsDesigned for WiMAX b
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