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Liste catégorie RF & Micro-ondes - Transistors - FETs - LDMOS page 0
BLC6G20-110: UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequenc
BLC6G20-140: UHF power LDMOS transistor140 W LDMOS power transistor for base station applications at frequenc
BLC6G20-75: UHF power LDMOS transistor75 W LDMOS power transistor for base station applications at frequenci
BLC6G20LS-110: UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequenc
BLC6G20LS-140: UHF power LDMOS transistor140 W LDMOS power transistor for base station applications at frequenc
BLC6G20LS-75: UHF power LDMOS transistor75 W LDMOS power transistor for base station applications at frequenci
BLC6G22-100: UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequenc
BLC6G22-130: UHF power LDMOS transistor 130 W LDMOS power transistor for base station applications at frequen
BLC6G22-75: Power LDMOS Transistor75 W LDMOS power transistor for base station applications at frequencies fro
BLC6G22LS-100: UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequenc
BLC6G22LS-130: UHF power LDMOS transistor 130 W LDMOS power transistor for base station applications at frequen
BLC6G22LS-75: Power LDMOS Transistor75 W LDMOS power transistor for base station applications at frequencies fro
BLF3G21-6: UHF Power LDMOS Transistor6 W LDMOS power transistor for base station applications at frequencies
BLF4G10-120: UHF power LDMOS transistor120 W LDMOS power transistor for base station applications at frequenc
BLF4G10LS-120: UHF power LDMOS transistor120 W LDMOS power transistor for base station applications at frequencie
BLF4G10S-120: UHF power LDMOS transistor120 W LDMOS power transistor for base station applications at frequenc
BLF4G20-110B: UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencie
BLF4G20LS-110B: UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencie
BLF4G20S-110B: UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencie
BLF4G22-100: UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequenc
BLF4G22S-100: UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequenc
BLF573S: HF / VHF Power LDMOS TransistorA 300 W LDMOS RF power transistor for broadcast applications and in
BLF6G10-45: Power LDMOS Transistor45 W LDMOS power transistor for base station applications at frequencies fro
BLF6G10LS-135R: Power LDMOS Transistor135 W LDMOS power transistor for base station applications at frequencies fr
BLF6G10LS-200: Power LDMOS Transistor200 W LDMOS power transistor for base station applications at frequencies fr
BLF6G10LS-200R: Power LDMOS Transistor200 W LDMOS power transistor for base station applications at frequencies fr
BLF6G10S-45: Power LDMOS Transistor45 W LDMOS power transistor for base station applications at frequencies fro
BLF6G20-110: Power LDMOS Transistor110 W LDMOS power transistor for base station applications at frequencies fr
BLF6G20-180RN: Power LDMOS Transistor180 W LDMOS power transistor for base station applications at frequencies fr
BLF6G20LS-110: Power LDMOS Transistor110 W LDMOS power transistor for base station applications at frequencies fr
BLF6G21-10G: Power LDMOS Transistor10 W LDMOS power transistor for base station applications at frequencies fro
BLF6G22-180RN: Power LDMOS Transistor180 W LDMOS power transistor for base station applications at frequencies fr
BLF6G22LS-75: Power LDMOS Transistor75 W LDMOS power transistor for base station applications at frequencies fro
BLF6G27-45: WiMAX Power LDMOS Transistor45 W LDMOS power transistor for base station applications at frequenci
BLF6G27S-45: WiMAX Power LDMOS Transistor45 W LDMOS power transistor for base station applications at frequenci
BLF6G38-50: WiMAX Power LDMOS Transistor* Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pi
BLF6G38LS-50: WiMAX Power LDMOS Transistor* Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pi
BLF900-110: Base Station Ldmos Transistors<<<>>>110 W Ldmos Power Transistor For Base Station Applications at Fr
BLF900S-110: Base Station Ldmos Transistors<<<>>>110 W Ldmos Power Transistor For Base Station Applications at Fr
BLL6H0514-25: LDMOS Driver Transistor25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.
DB-900-100W: 100W / 26V / 869-894 MHZ pa Using 2X PD57060S
DB-900-60W: 60W / 26V / 869-894 MHZ pa Using 1X PD57070S
DB-900-80W: 80W / 26V / 869-894 MHZ pa Using 2X PD57045S
DB-915-12W: 12W / 12V / 875-915 MHZ pa Using 1X PD55015S
DB-960-60W: 60W / 26V / 925-960 MHZ pa Using 1X PD57070S
DB-960-70W: 70W / 26V / 925-960 MHZ pa Using 2X PD57045S
DB-960-90W: 90W / 26V / 925-960 MHZ pa Using 2X PD57060S
L2701: Pout W = 30 ;; Freq MHZ = 500 ;; Gain DB = 13 ;; Theta JC = 1.8 ;; GM Mho = 1.6 ;; Idsat a = 10 ;; C
L2711: Pout W = 7 ;; Freq MHZ = 500 ;; Gain DB = 10 ;; Theta JC = 1.8 ;; GM Mho = 1.7 ;; Idsat a = 13 ;; Ci
L2721: Pout W = 15 ;; Freq MHZ = 500 ;; Gain DB = 11 ;; Theta JC = 1.8 ;; GM Mho = 1.7 ;; Idsat a = 13 ;; C
L2801: Pout W = 15 ;; Freq MHZ = 1000 ;; Gain DB = 12 ;; Theta JC = 3.4 ;; GM Mho = 0.8 ;; Idsat a = 5.5 ;;
L2821: Pout W = 8 ;; Freq MHZ = 500 ;; Gain DB = 13 ;; Theta JC = 3.4 ;; GM Mho = 1 ;; Idsat a = 7.5 ;; Cis
L8701P: Pout W = 30 ;; Freq MHZ = 500 ;; Gain DB = 13 ;; Theta JC = 2.5 ;; GM Mho = 1.6 ;; Idsat a = 10 ;; C
L8711P: Pout W = 7 ;; Freq MHZ = 500 ;; Gain DB = 10 ;; Theta JC = 2.5 ;; GM Mho = 1.7 ;; Idsat a = 13 ;; Ci
L8721P: Pout W = 15 ;; Freq MHZ = 500 ;; Gain DB = 11 ;; Theta JC = 2.5 ;; GM Mho = 1.7 ;; Idsat a = 13 ;; C
L88016: Pout W = 30 ;; Freq MHZ = 500 ;; Gain DB = 14 ;; Theta JC = 1.8 ;; GM Mho = 0.8 ;; Idsat a = 5.5 ;;
L8801P: Pout W = 10 ;; Freq MHZ = 500 ;; Gain DB = 10 ;; Theta JC = 5 ;; GM Mho = 0.8 ;; Idsat a = 5.5 ;; Ci
L8821P: Pout W = 5 ;; Freq MHZ = 500 ;; Gain DB = 13 ;; Theta JC = 5 ;; GM Mho = 1 ;; Idsat a = 7.5 ;; Ciss
LB401: Pout W = 130 ;; Freq MHZ = 500 ;; Gain DB = 14 ;; Theta JC = 0.75 ;; GM Mho = 2.7 ;; Idsat a = 17 ;;
LB501: Pout W = 175 ;; Freq MHZ = 500 ;; Gain DB = 13 ;; Theta JC = 0.44 ;; GM Mho = 4.8 ;; Idsat a = 30 ;;
LC401: Pout W = 60 ;; Freq MHZ = 500 ;; Gain DB = 12 ;; Theta JC = 1.3 ;; GM Mho = 2.7 ;; Idsat a = 17 ;; C
LC421: Pout W = 25 ;; Freq MHZ = 500 ;; Gain DB = 8 ;; Theta JC = 1.3 ;; GM Mho = 2.7 ;; Idsat a = 17 ;; Ci
LC801: Pout W = 20 ;; Freq MHZ = 500 ;; Gain DB = 13 ;; Theta JC = 3.4 ;; GM Mho = 0.8 ;; Idsat a = 5.5 ;;
LC821: Pout W = 8 ;; Freq MHZ = 500 ;; Gain DB = 10 ;; Theta JC = 3.4 ;; GM Mho = 1 ;; Idsat a = 7.5 ;; Cis
LET19060C: RF Power Transistors Ldmos Enhanced Technology
LET20015: RF Power Transistors Ldmos Enhanced Technology in Plastic Package
LET20030C: RF Power Transistors Ldmos Enhanced Technology
LET20030S: RF Power Transistors Ldmos Enhanced Technology in Plastic Package
LET21004: RF Power Transistors Ldmos Enhanced Technology in Plastic Package
LET21008: RF Power Transistors Ldmos Enhanced Technology in Plastic Package
LET21030C: RF Power Transistors Ldmos Enhanced Technology
LET8180: RF Power Transistors Ldmos Enhanced Technology
LET9002: RF Power Transistors Ldmos Enhanced Technology in Plastic Package
LET9006: RF Power Transistors Ldmos Enhanced Technology in Plastic Package
LET9045: Transistors, Radio FrequencyRF power transistor, LdmoST plastic family N-channel enhancement-mode
LET9045S: RF Power Transistors Ldmos Enhanced Technology in Plastic Package
LET9060C: RF Power Transistors Ldmos Enhanced Technology
LET9060S: RF Power Transistors Ldmos Enhanced Technology in Plastic Package
LET9085: RF Power Transistors Ldmos Enhanced Technology
LET9130: RF Power Transistors Ldmos Enhanced Technology
LK401: Pout W = 130 ;; Freq MHZ = 500 ;; Gain DB = 14 ;; Theta JC = 0.75 ;; GM Mho = 2.7 ;; Idsat a = 17 ;;
LK421: Pout W = 30 ;; Freq MHZ = 500 ;; Gain DB = 13 ;; Theta JC = 0.75 ;; GM Mho = 2.7 ;; Idsat a = 17 ;;
LK701: Pout W = 70 ;; Freq MHZ = 500 ;; Gain DB = 14 ;; Theta JC = 1 ;; GM Mho = 1.6 ;; Idsat a = 10 ;; Cis
LK702: Pout W = 90 ;; Freq MHZ = 500 ;; Gain DB = 13 ;; Theta JC = 0.6 ;; GM Mho = 3.2 ;; Idsat a = 20 ;; C
LK721: Pout W = 35 ;; Freq MHZ = 500 ;; Gain DB = 10 ;; Theta JC = 1 ;; GM Mho = 1.7 ;; Idsat a = 13 ;; Cis
LK722: Pout W = 45 ;; Freq MHZ = 500 ;; Gain DB = 11 ;; Theta JC = 0.5 ;; GM Mho = 3.4 ;; Idsat a = 26 ;; C
LK802: Pout W = 45 ;; Freq MHZ = 1000 ;; Gain DB = 12 ;; Theta JC = 1.1 ;; GM Mho = 1.6 ;; Idsat a = 11 ;;
LK822: Pout W = 40 ;; Freq MHZ = 400 ;; Gain DB = 12 ;; Theta JC = 1.1 ;; GM Mho = 2 ;; Idsat a = 15 ;; Cis
LP701: Pout W = 35 ;; Freq MHZ = 500 ;; Gain DB = 12 ;; Theta JC = 1.8 ;; GM Mho = 1.6 ;; Idsat a = 10 ;; C
LP702: Pout W = 70 ;; Freq MHZ = 500 ;; Gain DB = 12 ;; Theta JC = 1 ;; GM Mho = 3.2 ;; Idsat a = 20 ;; Cis
LP721: Pout W = 20 ;; Freq MHZ = 500 ;; Gain DB = 10 ;; Theta JC = 1.8 ;; GM Mho = 1.7 ;; Idsat a = 13 ;; C
LP722: Pout W = 35 ;; Freq MHZ = 500 ;; Gain DB = 10 ;; Theta JC = 1 ;; GM Mho = 3.4 ;; Idsat a = 26 ;; Cis
LP801: Pout W = 15 ;; Freq MHZ = 1000 ;; Gain DB = 12 ;; Theta JC = 3.4 ;; GM Mho = 0.8 ;; Idsat a = 5.5 ;;
LP802: Pout W = 30 ;; Freq MHZ = 1000 ;; Gain DB = 12 ;; Theta JC = 1.8 ;; GM Mho = 1.6 ;; Idsat a = 11 ;;
LP821: Pout W = 10 ;; Freq MHZ = 500 ;; Gain DB = 12 ;; Theta JC = 3.4 ;; GM Mho = 1 ;; Idsat a = 7.5 ;; Ci
LQ801: Pout W = 30 ;; Freq MHZ = 1000 ;; Gain DB = 12 ;; Theta JC = 1.8 ;; GM Mho = 0.8 ;; Idsat a = 5.5 ;;
LQ821: Pout W = 20 ;; Freq MHZ = 500 ;; Gain DB = 12 ;; Theta JC = 1.8 ;; GM Mho = 1 ;; Idsat a = 7.5 ;; Ci
LR301: Pout W = 300 ;; Freq MHZ = 350 ;; Gain DB = 10 ;; Theta JC = 0.38 ;; GM Mho = 7.2 ;; Idsat a = 42 ;;
LR401: Pout W = 130 ;; Freq MHZ = 500 ;; Gain DB = 14 ;; Theta JC = 0.75 ;; GM Mho = 2.7 ;; Idsat a = 17 ;;
LR501: Pout W = 220 ;; Freq MHZ = 350 ;; Gain DB = 11 ;; Theta JC = 0.44 ;; GM Mho = 4.8 ;; Idsat a = 30 ;;
LX401: Pout W = 60 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 1.3 ;; GM Mho = 2.7 ;; Idsat a = 17 ;;
LX501: Pout W = 100 ;; Freq MHZ = 500 ;; Gain DB = 12 ;; Theta JC = 0.75 ;; GM Mho = 4.8 ;; Idsat a = 30 ;;
LX521: Pout W = 45 ;; Freq MHZ = 500 ;; Gain DB = 10 ;; Theta JC = 0.75 ;; GM Mho = 5.1 ;; Idsat a = 39 ;;
LX802: Pout W = 30 ;; Freq MHZ = 1000 ;; Gain DB = 12 ;; Theta JC = 1.8 ;; GM Mho = 1.6 ;; Idsat a = 11 ;;
LZ402: Pout W = 125 ;; Freq MHZ = 500 ;; Gain DB = 12 ;; Theta JC = 0.75 ;; GM Mho = 5.4 ;; Idsat a = 34 ;;
MAX1385: Dual RF LDMOS Bias Controllers With I²C/SPI InterfaceThe MAX1385/MAX1386 set and control bias cond
MAX1385BETM+: Dual RF LDMOS Bias Controllers With I²C/SPI InterfaceThe MAX1385/MAX1386 set and control bias cond
MAX1385BETM+T: Dual RF LDMOS Bias Controllers With I²C/SPI InterfaceThe MAX1385/MAX1386 set and control bias cond
MAX1385BUTM+: Dual RF LDMOS Bias Controllers With I²C/SPI InterfaceThe MAX1385/MAX1386 set and control bias cond
MAX1385BUTM+T: Dual RF LDMOS Bias Controllers With I²C/SPI InterfaceThe MAX1385/MAX1386 set and control bias cond
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