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Liste catégorie RF & Micro-ondes - Transistors - FETs page 0
2SK161: Vgdo VGDS (VGDO) (V) = -18 ;; Id (IC)(mA) = 10 ;; PD (mW) = 200 ;; Idss (mA) = 1 to 10 ;; YFS (Typ.)
2SK1771: Vgdo VGDS (VGDO) (V) = 12.5 ;; Id (IC)(mA) = 30 ;; PD (mW) = 150 ;; Idss (mA) = 0 to 0.1 ;; YFS (Typ
2SK1875: Vgdo VGDS (VGDO) (V) = -20 ;; Id (IC)(mA) = 10 ;; PD (mW) = 100 ;; Idss (mA) = 6 to 32 ;; YFS (Typ.)
2SK192A: Vgdo VGDS (VGDO) (V) = -18 ;; Id (IC)(mA) = 10 ;; PD (mW) = 200 ;; Idss (mA) = 3 to 24 ;; YFS (Typ.)
2SK210: Vgdo VGDS (VGDO) (V) = -18 ;; Id (IC)(mA) = 10 ;; PD (mW) = 100 ;; Idss (mA) = 3 to 24 ;; YFS (Typ.)
2SK211: Vgdo VGDS (VGDO) (V) = -18 ;; Id (IC)(mA) = 10 ;; PD (mW) = 150 ;; Idss (mA) = 1 to 10 ;; YFS (Typ.)
2SK2331: Vgdo VGDS (VGDO) (V) = -3 ;; Id (IC)(mA) = 120 ;; PD (mW) = 150 ;; Idss (mA) = 25 to 120 ;; YFS (Typ
2SK2332: Vgdo VGDS (VGDO) (V) = -3 ;; Id (IC)(mA) = 80 ;; PD (mW) = 150 ;; Idss (mA) = 20 to 80 ;; YFS (Typ.)
2SK241: Vgdo VGDS (VGDO) (V) = 20 ;; Id (IC)(mA) = 30 ;; PD (mW) = 200 ;; Idss (mA) = 1.5 to 14 ;; YFS (Typ.
2SK2496: Vgdo VGDS (VGDO) (V) = -3 ;; Id (IC)(mA) = 80 ;; PD (mW) = 150 ;; Idss (mA) = 20 to 80 ;; YFS (Typ.)
2SK2497: Vgdo VGDS (VGDO) (V) = -3 ;; Id (IC)(mA) = 80 ;; PD (mW) = 150 ;; Idss (mA) = 15 to 80 ;; YFS (Typ.)
2SK2856: Vgdo VGDS (VGDO) (V) = -3 ;; Id (IC)(mA) = 80 ;; PD (mW) = 100 ;; Idss (mA) = 15 to 18 ;; YFS (Typ.)
2SK302: Vgdo VGDS (VGDO) (V) = 20 ;; Id (IC)(mA) = 30 ;; PD (mW) = 150 ;; Idss (mA) = 1.5 to 14 ;; YFS (Typ.
2SK3179: Vgdo VGDS (VGDO) (V) = -4 ;; Id (IC)(mA) = 80 ;; PD (mW) = 100 ;; Idss (mA) = 55 ;; YFS (Typ.) @1kHz
2SK709: Vgdo VGDS (VGDO) (V) = -20 ;; Id (IC)(mA) = 10 ;; PD (mW) = 300 ;; Idss (mA) = 6 to 32 ;; YFS (Typ.)
2SK710: Vgdo VGDS (VGDO) (V) = -20 ;; Id (IC)(mA) = 10 ;; PD (mW) = 200 ;; Idss (mA) = 6 to 32 ;; YFS (Typ.)
2SK711: Vgdo VGDS (VGDO) (V) = -20 ;; Id (IC)(mA) = 10 ;; PD (mW) = 150 ;; Idss (mA) = 6 to 32 ;; YFS (Typ.)
2SK881: Vgdo VGDS (VGDO) (V) = -18 ;; Id (IC)(mA) = 10 ;; PD (mW) = 100 ;; Idss (mA) = 1 to 10 ;; YFS (Typ.)
2SK882: Vgdo VGDS (VGDO) (V) = 20 ;; Id (IC)(mA) = 30 ;; PD (mW) = 100 ;; Idss (mA) = 3 to 14 ;; YFS (Typ.)
3SK195: VDS VGDS (VGDO) (V) = 13.5 ;; Id (mA) = 30 ;; PD (mW) = 150 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK199: VDS VGDS (VGDO) (V) = 13.5 ;; Id (mA) = 30 ;; PD (mW) = 150 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK207: VDS VGDS (VGDO) (V) = 13.5 ;; Id (mA) = 30 ;; PD (mW) = 150 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK225: VDS VGDS (VGDO) (V) = 13.5 ;; Id (mA) = 30 ;; PD (mW) = 150 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK226: VDS VGDS (VGDO) (V) = 13.5 ;; Id (mA) = 30 ;; PD (mW) = 150 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK232: VDS VGDS (VGDO) (V) = 12.5 ;; Id (mA) = 30 ;; PD (mW) = 150 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK240: VDS VGDS (VGDO) (V) = (-9) ;; Id (mA) = 25 ;; PD (mW) = 150 ;; Idss (mA) = 6 to 20 ;; Yfs(Typ.) @1kH
3SK249: VDS VGDS (VGDO) (V) = 12.5 ;; Id (mA) = 30 ;; PD (mW) = 100 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK256: VDS VGDS (VGDO) (V) = 13.5 ;; Id (mA) = 30 ;; PD (mW) = 100 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK257: VDS VGDS (VGDO) (V) = 13.5 ;; Id (mA) = 30 ;; PD (mW) = 100 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK258: VDS VGDS (VGDO) (V) = 13.5 ;; Id (mA) = 30 ;; PD (mW) = 100 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK259: VDS VGDS (VGDO) (V) = 15 ;; Id (mA) = 30 ;; PD (mW) = 100 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1kHz
3SK260: VDS VGDS (VGDO) (V) = 15 ;; Id (mA) = 30 ;; PD (mW) = 100 ;; Idss (mA) = 3 to 14 ;; Yfs(Typ.) @1kHz
3SK274: VDS VGDS (VGDO) (V) = (-9) ;; Id (mA) = 25 ;; PD (mW) = 100 ;; Idss (mA) = 6 to 20 ;; Yfs(Typ.) @1kH
3SK283: VDS VGDS (VGDO) (V) = (-6) ;; Id (mA) = 20 ;; PD (mW) = 150 ;; Idss (mA) = 4 to 16 ;; Yfs(Typ.) @1kH
3SK284: VDS VGDS (VGDO) (V) = (-6) ;; Id (mA) = 20 ;; PD (mW) = 100 ;; Idss (mA) = 4 to 16 ;; Yfs(Typ.) @1kH
3SK291: VDS VGDS (VGDO) (V) = 12.5 ;; Id (mA) = 30 ;; PD (mW) = 150 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK292: VDS VGDS (VGDO) (V) = 12.5 ;; Id (mA) = 30 ;; PD (mW) = 150 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK293: VDS VGDS (VGDO) (V) = 12.5 ;; Id (mA) = 30 ;; PD (mW) = 100 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK294: VDS VGDS (VGDO) (V) = 12.5 ;; Id (mA) = 30 ;; PD (mW) = 100 ;; Idss (mA) = 0 to 0.1 ;; Yfs(Typ.) @1k
3SK320: VDS VGDS (VGDO) (V) = (-6) ;; Id (mA) = 20 ;; PD (mW) = 100 ;; Idss (mA) = 9 to 18 ;; Yfs(Typ.) @1kH
CLY2: Description = High Power Packaged GAAS FET; +23.5 DBM ;; Freq (GHz) = to 3 ;; Gain (dB) = 14.5 ;; II
CLY5: Description = High Power Packaged GAAS FET; +26.5 DBM ;; Freq (GHz) = to 2.5 ;; Gain (dB) = 9.5 ;; I
CRF-22010: Sic MesFET
CRF-22010-001: Sic MesFET
CRF-22010-101: Sic MesFET
CRF-24010: Sic MesFET
CRF-24010-001: Sic MesFET
CRF-24010-101: Sic MesFET
FH1:
FH101:
FHF1:
FP101:
FP1189:
FP1189-PCB-1900:
FP1189-PCB-900:
FP1189-PCB1900S:
FP1189-PCB2140S:
FP1189-PCB900S:
FP2189:
FP2189-PCB1900S:
FP2189-PCB2140S:
FP2189-PCB900S:
FP31QF:
FP31QF-PCB1900:
FP31QF-PCB2140:
FP31QF-PCB900:
MGA-425P8: General Purpose FET<<<>>>MGA-425P8 Power Amplifier is Designed For Wireless Application in The 2-10G
MGFC39V5053:
MGFC47A7785A:
MRF166W500MHZMJB: RF Power Field-effect Transistor
MRF18060AL: 1805–1880 MHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs SUBSCRIBE The MR...
MRF21010: MRF21010LSR1 2110-2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
MRFE6S9130HR3: RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for N-CDMA,
MRFE6S9130HSR3: RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for N-CDMA,
P35-1110-0: MesFET Die For Opto Receivers
P35-1110-1: Packaged MesFET For Opto Receivers
TGF1350-SCC: Description = 0.3 Mm, MesFET ;; Freq(GHz) = DC - 18.0 ;; Gain (dB) = 11 ;; Power(dBm) = 13 ;; Nf/pae
TGF4112-EPU: Description = 12mm HFET ;; Freq(GHz) = DC - 8.0 ;; Gain (dB) = 14@2GHz ;; Power(dBm) = 37 ;; Nf/pae
TGF4118-EPU: Description = 18mm HFET ;; Freq(GHz) = DC - 6.0 ;; Gain (dB) = 13.5@2GHz ;; Power(dBm) = 38.5 ;; Nf/
TGF4124-EPU: Description = 24mm HFET ;; Freq(GHz) = DC - 4.0 ;; Gain (dB) = 13@2GHz ;; Power(dBm) = 40 ;; Nf/pae
TGF4230-SCC: Description = 1.2 MM HFET ;; Freq(GHz) = DC - 12.0 ;; Gain (dB) = 10 ;; Power(dBm) = 28.5 ;; Nf/pae
TGF4240-SCC: Description = 2.4mm HFET ;; Freq(GHz) = DC - 12.0 ;; Gain (dB) = 10 ;; Power(dBm) = 31.5 ;; Nf/pae =
TGF4250-SCC: Description = 4.8 MM HFET ;; Freq(GHz) = DC - 10.5 ;; Gain (dB) = 8.5 ;; Power(dBm) = 34 ;; Nf/pae =
TGF4260-SCC: Description = 9.6mm HFET ;; Freq(GHz) = DC - 10.5 ;; Gain (dB) = 9.5 ;; Power(dBm) = 37 ;; Nf/pae =
TGF4350-EPU: Description = 0.3 Mm, 0.25-µm MMW Phemt 2MI ;; Freq(GHz) = DC - 22.0 ;; Gain (dB) = 13@10GHz ;; Powe
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