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Liste catégorie RF & Micro-ondes - Transistors page 0
1214-32L: L-band 1200-1400 Mhz, Class C, Common Base-pulsed<<<>>>products Designed For Each of The Systems Ope
AM0608-200: Avionics Applications RF & Microwave Transistors
AM0608-450: Avionics Applications RF & Microwave Transistors
AM1011-300: Avionics Applications L-band RF & Microwave Transistors
AM2729-110: S-band Radar Applications RF & Microwave Transistors
AM2931-110: S-band Radar Applications RF & Microwave Transistors
AM81719-030: Telemetry Applications RF & Microwave Transistors
AM81719-040: Telemetry Applications RF & Microwave Transistors
AM81720-012: Communications Applications RF & Microwave Transistors
AM82223-010: Telemetry Applications RF & Microwave Transistors
AM82731-003: S-band Radar Applications RF & Microwave Transistors
AM82731-006: S-band Radar Applications RF & Microwave Transistors
AM82731-012: S-band Radar Applications RF & Microwave Transistors
AM82731-025: S-band Radar Applications RF & Microwave Transistors
AM82731-050: S-band Radar Applications RF & Microwave Transistors
AM83135-001: RF & Microwave Transistors S-band Radar Applications
AM83135-005: RF & Microwave Transistors S-band Radar Applications
AM83135-010: S-band Radar Applications RF & Microwave Transistors
AM83135-015: S-band Radar Applications RF & Microwave Transistors
AM83135-030: S-band Radar Applications RF & Microwave Transistors
AM83135-040: S-band Radar Applications RF & Microwave Transistors
AM83135-050: S-band Radar Applications RF & Microwave Transistors
BFG310/XR: NPN 14 GHz wideband transistorNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT1
BFG310W/XR: NPN 14 GHz wideband transistor NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT
BFG325/XR: NPN 14 GHz wideband transistor NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT
BFG325W/XR: NPN 14 GHz wideband transistor NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT
BLC6G10-200: UHF power LDMOS transistor200 W LDMOS power transistor for base station applications at frequencie
BLF369: VHF power LDMOS transistorA 500 W LDMOS RF Power transistor for broadcast transmitter applications
BLF6G20-180P: UHF power LDMOS transistor180 W LDMOS power transistor for base station applications at frequencie
BLM6G22-30: W-CDMA 2100 MHz To 2200 MHz Power MMIC30 W LDMOS 2-stage power MMIC for base station applications
BLM6G22-30G: W-CDMA 2100 MHz To 2200 MHz Power MMIC30 W LDMOS 2-stage power MMIC for base station applications
FHC40LG: C, X/Ku, K-band Low Noise Hemts
FHR02X:
FHR20X:
FHX04LG: C, X/Ku, K-band Low Noise Hemts
FHX04X:
FHX05LG: C, X/Ku, K-band Low Noise Hemts
FHX05X:
FHX06LG: C, X/Ku, K-band Low Noise Hemts
FHX06X:
FHX13LG: C, X/Ku, K-band Low Noise Hemts
FHX13X:
FHX14LG: C, X/Ku, K-band Low Noise Hemts
FHX14X:
FHX35LG: C, X/Ku, K-band Low Noise Hemts
FHX35X:
FHX45X:
HMC478MP86: DC - 4 GHz, 22dB Gain, +32dBm OIP3, +18dBm P1dB The HMC478MP86 is a SiGe Heterojunction BipolarT
HMC478ST89: DC - 4 GHz, 22dB Gain, +32dBm OIP3, +18dBm P1dB Transistor (HBT) Gain Block MMIC SMT amplifi erc
HMC480ST89: DC - 5 GHz, 19dB Gain, +34dBm OIP3, +20dBm P1dBThe HMC480ST89 is an InGaP HBT Gain BlockMMIC SMT
HMC481ST89: DC - 5 GHz, 20dB Gain, +33dBm OIP3, +19dBm P1dBThe HMC481ST89 is a SiGe Heterojunction BipolarTr
HMC482ST89: DC - 5 GHz, 19dB Gain, +36dBm OIP3, +24dBm P1dB The HMC482ST89 is a SiGe Heterojunction BipolarT
HMC505LP4: 6.8-7.4 GHz, +11dBm Pout, -106 dBc/Hz SSB Phase Noise@100kHz offsetThe HMC505LP4 is a GaAs InGaP H
HMC506LP4: 7.8-8.7 GHz, +14dBm Pout, -103 dBc/Hz SSB Phase Noise@100kHz offsetThe HMC506LP4 is a GaAs InGaP H
HMC535LP4: PLO, 14.7 - 15.4 GHz, +9dBm Po, -110 dBc/Hz Phase Noise@100kHzThe HMC535LP4 & HMC535LP4E are GaAs
HMC535LP4E: PLO, 14.7 - 15.4 GHz, +9dBm Po, -110 dBc/Hz Phase Noise@100kHzThe HMC535LP4 & HMC535LP4E are GaAs
INA209: High-Side Measurement, Bi-Directional Current/Power Monitor with I2C InterfaceThe INA209 is a high
INA209AIPW: High-Side Measurement, Bi-Directional Current/Power Monitor with I2C InterfaceThe INA209 is a high
INA209AIPWR: High-Side Measurement, Bi-Directional Current/Power Monitor with I2C InterfaceThe INA209 is a high
KTC3600U: RF/VHF/UHF Transistor VHF/UHF Wide Band Amplifier Application.
KTC3600U: RF/VHF/UHF Transistor VHF/UHF Wide Band Amplifier Application.
KTC3790U: RF/VHF/UHF Transistor VHF/UHF Wide Band Amplifier Application.
KTC3790U: RF/VHF/UHF Transistor VHF/UHF Wide Band Amplifier Application.
KTC3790U: High Voltage MOSFETsThis planar stripe MOSFET has better characteristics, such as fastswitching
KTC3790U: High Voltage MOSFETsThis planar stripe MOSFET has better characteristics, such as fastswitching
MD7IC2050GNR1: RF LDMOS Wideband IntegratedPower AmplifiersThe MD7IC2050N wideband integrated circuit is design
MD7IC2050NBR1: RF LDMOS Wideband IntegratedPower AmplifiersThe MD7IC2050N wideband integrated circuit is design
MD7IC2050NR1: RF LDMOS Wideband IntegratedPower AmplifiersThe MD7IC2050N wideband integrated circuit is design
MRF18030A: RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for GSM and
MRF6S19140HR3: RF Power Field Effect TransistorDesigned for PCN and PCS base station applications with frequencie
MRF6S19140HSR3: RF Power Field Effect TransistorDesigned for PCN and PCS base station applications with frequencie
MRF6S21140HR3: RF Power Field Effect TransistorDesigned for W-CDMA base station applications with frequencies fro
MRF6S21140HSR3: RF Power Field Effect TransistorDesigned for W-CDMA base station applications with frequencies fro
MRF6V12500HR3: RF Power Field Effect TransistorsRF Power Field Effect TransistorsN-Channel Enhancement -Mode La
MRF6V12500HSR3: RF Power Field Effect TransistorsRF Power Field Effect TransistorsN-Channel Enhancement -Mode La
MRF6V2010N: Designed primarily for pulsed wideband large - signal output and driverapplications with frequenci
MRF6V2010NBR1: RF Power Field Effect TransistorDesigned primarily for CW large-signal output and driver applicati
MRF6V2010NR1: RF Power Field Effect TransistorDesigned primarily for CW large-signal output and driver applicati
MRF6V2150N: Designed primarily for wideband large- signal output and driver applicationswith frequencies up to
MRF6V2150NB: Designed primarily for wideband large- signal output and driver applicationswith frequencies up to
MRF6V2150NBR1: RF Power Field Effect TransistorDesigned primarily for CW large-signal output and driver applicati
MRF6V2150NR1: RF Power Field Effect TransistorDesigned primarily for CW large-signal output and driver applicati
MRF6V2300N: Designed primarily for pulsed wideband large - signal output and driverapplications with frequenci
MRF6V2300NBR1: RF Power Field Effect TransistorDesigned primarily for CW large-signal output and driver applicati
MRF6V2300NR1: RF Power Field Effect TransistorDesigned primarily for CW large-signal output and driver applicati
MRF7S21170HR3: RF Power Field Effect TransistorDesigned for CDMA base station applications with frequencies from
MRF7S21170HR3: RF Power Field Effect TransistorDesigned for CDMA base station applications with frequencies from
MRF8S18120HR3: RF Power Field Effect TransistorsRF Power Field Effect TransistorsN-Channel Enhancement -Mode La
MRFG35010A: 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMTsThe MRFG35010AR1 and MRFG35010AR5 are designed for WiMAX,
MRFG35010ANT1: MRFG35010ANT1 : 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT SUBSCRIBE The MRFG3501
MSC80185: General Purpose Linear Applications RF & Microwave Transistors
MSC80186: General Purpose Linear Applications RF & Microwave Transistors
MSC80195: General Purpose Linear Applications RF & Microwave Transistors
MSC80196: General Purpose Linear Applications RF & Microwave Transistors
MSC80197: General Purpose Linear Applications RF & Microwave Transistors
MSC81002: General Purpose Amplifier Applications RF & Microwave Transistors
MSC81005: General Purpose Amplifier Applications RF & Microwave Transistors
MSC81010: MCS81010 General Purpose Amplifier Applications RF & Microwave Transistors
MSC81020: General Purpose Amplifier Applications RF & Microwave Transistors
MSC81402: General Purpose Amplifiers Applications RF & Microwave Transistors
MSC82010: General Purpose Amplifier Applications RF & Microwave Transistors
MSC82100: General Purpose Linear Applications RF & Microwave Transistors
MSC82302: General Purpose Amplifier Applications RF & Microwave Transistors
MSC82304: General Purpose Amplifier Applications RF & Microwave Transistors
MSC82306: General Purpose Amplifier Applications RF & Microwave Transistors
MSC82307: General Purpose Amplifier Applications RF & Microwave Transistors
MSC83303: General Purpose Amplifier Applications RF & Microwave Transistors
MSC83305: General Purpose Amplifier Applications RF & Microwave Transistors
PD55015-E: General features■ Excellent thermal stability■ Common source configuration■
PD55015S-E: General features■ Excellent thermal stability■ Common source configuration■
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